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IRF7459PBF smps mosfet notes through are on page 8 absolute maximum ratings symbol parameter max. units v ds drain-source voltage 20 v v gs gate-to-source voltage 12 v i d @ t a = 25c continuous drain current, v gs @ 10v 12 i d @ t a = 70c continuous drain current, v gs @ 10v 10 a i dm pulsed drain current 100 p d @t a = 25c maximum power dissipation 2.5 w p d @t a = 70c maximum power dissipation 1.6 w linear derating factor 0.02 w/c t j , t stg junction and storage temperature range -55 to + 150 c hexfet power mosfet benefits v dss r ds(on) max i d 20v 9.0m ? 12a www.irf.com 1 ultra-low gate impedance very low r ds(on) at 4.5v v gs fully characterized avalanche voltage and current so-8 top view 8 12 3 4 5 6 7 d d d d g s a s s a symbol parameter typ. max. units r jl junction-to-drain lead CCC 20 r ja junction-to-ambient CCC 50 c/w thermal resistance high frequency dc-dc isolated converters with synchronous rectification for telecom and industrial use applications high frequency buck converters for computer processor power lead-free downloaded from: http:///
IRF7459PBF 2 www.irf.com symbol parameter min. typ. max. units conditions g fs forward transconductance 32 CCC CCC s v ds = 16v, i d = 9.6a q g total gate charge CCC 23 35 i d = 9.6a q gs gate-to-source charge CCC 6.6 10 nc v ds = 10v q gd gate-to-drain ("miller") charge CCC 6.3 9.5 v gs = 4.5v q oss output gate charge CCC 17 26 v gs = 0v, v ds = 10v t d(on) turn-on delay time CCC 10 CCC v dd = 10v, t r rise time CCC 4.5 CCC i d = 9.6a t d(off) turn-off delay time CCC 20 CCC r g = 1.8 ? t f fall time CCC 5.0 CCC v gs = 4.5v c iss input capacitance CCC 2480 CCC v gs = 0v c oss output capacitance CCC 1030 CCC v ds = 10v c rss reverse transfer capacitance CCC 130 CCC pf ? = 1.0mhz symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) CCC CCC p-n junction diode. CCC 0.84 1.3 v t j = 25c, i s = 9.6a, v gs = 0v CCC 0.69 CCC t j = 125c, i s = 9.6a, v gs = 0v t rr reverse recovery time CCC 70 105 ns t j = 25c, i f = 9.6a, v r = 15v q rr reverse recovery charge CCC 70 105 nc di/dt = 100a/s t rr reverse recovery time CCC 70 105 ns t j = 125c, i f = 9.6a, v r =15v q rr reverse recovery charge CCC 75 113 nc di/dt = 100a/s parameter typ. max. units e as single pulse avalanche energy CCC 290 mj i ar avalanche current CCC 12 a avalanche characteristics static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.024 CCC v/c reference to 25c, i d = 1ma CCC 6.7 9.0 v gs = 10v, i d = 12a CCC 8.0 11 m ? v gs = 4.5v, i d = 9.6a CCC 11 22 v gs = 2.8v, i d = 6.0a v gs(th) gate threshold voltage 0.6 CCC 2.0 v v ds = v gs , i d = 250a CCC CCC 20 a v ds = 16v, v gs = 0v CCC CCC 100 v ds = 16v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 200 v gs = 12v gate-to-source reverse leakage CCC CCC -200 na v gs = -12v s d g diode characteristics 2.5 100 v sd diode forward voltage dynamic @ t j = 25c (unless otherwise specified) ns downloaded from: http:///
IRF7459PBF www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.0v 20s pulse width tj = 25c vgs top 15.0v 10.0v 4.50v 3.00v 2.70v 2.50v 2.25v bottom 2.00v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.0v 20s pulse width tj = 150c vgs top 15.0v 10.0v 4.50v 3.00v 2.70v 2.50v 2.25v bottom 2.00v 1 10 100 1000 2.0 2.5 3.0 3.5 4.0 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 12a downloaded from: http:///
IRF7459PBF 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 0 800 1600 2400 3200 4000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 50 0 2 4 6 8 10 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 9.6a v = 10v ds 0.1 1 10 100 1000 0.2 0.8 1.4 2.0 2.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms downloaded from: http:///
IRF7459PBF www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 3 6 9 12 15 t , case temperature ( c) i , drain current (a) c d downloaded from: http:///
IRF7459PBF 6 www.irf.com fig 14. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 13a&b. basic gate charge test circuit and waveform fig 14a&b. unclamped inductive test circuit and waveforms fig 14c. maximum avalanche energy vs. drain current d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 100 200 300 400 500 600 700 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 4.3a 7.7a 9.6a 0 2 04 06 08 01 0 0 i d , drain current (a) 0.007 0.008 0.009 0.010 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = 10v v gs = 4.5v 2.0 2.5 3.0 3.5 4.0 4.5 v gs, gate -to -source voltage (v) 0.006 0.008 0.010 0.012 0.014 0.016 0.018 0.020 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 12a downloaded from: http:///
IRF7459PBF www.irf.com 7 so-8 package outlinedimensions are shown in milimeters (inches) so-8 part marking information

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IRF7459PBF 8 www.irf.com when mounted on 1 inch square copper board, t<10 sec 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) n otes: 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters(inches). 3 . outline conforms to eia-481 & eia-541. so-8 tape and reeldimensions are shown in milimeters (inches) repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 6.3mh r g = 25 ? , i as = 9.6a. pulse width 300s; duty cycle 2%. data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/2006 downloaded from: http:///

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